? semiconductor components industries, llc, 2007 june, 2007 - rev. 4 1 publication order number: mmbt3904tt1/d mmbt3904tt1 general purpose transistors npn silicon this transistor is designed for general purpose amplifier applications. it is housed in the sot-416/sc-75 package which is designed for low power surface mount applications. features ? pb-free package is available maximum ratings (t a = 25 c) rating symbol value unit collector - emitter voltage v ceo 40 vdc collector - base voltage v cbo 60 vdc emitter - base voltage v ebo 6.0 vdc collector current - continuous i c 200 madc thermal characteristics characteristic symbol max unit total device dissipation, fr-4 board (note 1) @t a = 25 c derated above 25 c p d 200 1.6 mw mw/ c thermal resistance, junction- to- ambient (note 1) r ja 600 c/w total device dissipation, fr-4 board (note 2) @t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction- to- ambient (note 2) r ja 400 c/w junction and storage temperature range t j , t stg - 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr-4 @ minimum pad 2. fr-4 @ 1.0 1.0 inch pad http://onsemi.com sot-416/sc-75 case 463 style 1 marking diagram device package shipping ? ordering information mmbt3904tt1 sot-416 3000 tape & reel MMBT3904TT1G sot-416 (pb-free) 3000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. am = device code m = date code* = pb-free package general purpose amplifier transistors surface mount collector 3 1 base 2 emitter 3 2 1 am m 1 *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location)
mmbt3904tt1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) v (br)ceo 40 - vdc collector-base breakdown voltage (i c = 10 adc, i e = 0) v (br)cbo 60 - vdc emitter-base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 6.0 - vdc base cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i bl - 50 nadc collector cutoff current (v ce = 30 vdc, v eb = 3.0 vdc) i cex - 50 nadc on characteristics (note 3) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 50 madc, v ce = 1.0 vdc) (i c = 100 madc, v ce = 1.0 vdc) h fe 40 70 100 60 30 - - 300 - - - collector-emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) - - 0.2 0.3 vdc base-emitter saturation voltage (i c = 10 madc, i b = 1.0 madc) (i c = 50 madc, i b = 5.0 madc) v be(sat) 0.65 - 0.85 0.95 vdc small-signal characteristics current-gain - bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 300 - mhz output capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c obo - 4.0 pf input capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c ibo - 8.0 pf input impedance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h ie 1.0 10 k voltage feedback ratio (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h re 0.5 8.0 x 10 -4 small-signal current gain (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h fe 100 400 - output admittance (v ce = 10 vdc, i c = 1.0 madc, f = 1.0 khz) h oe 1.0 40 mhos noise figure (v ce = 5.0 vdc, i c = 100 adc, r s = 1.0 k , f = 1.0 khz) nf - 5.0 db switching characteristics delay time (v cc = 3.0 vdc, v be = -0.5 vdc) mmbt3904tt1 t d - 35 ns rise time (i c = 10 madc, i b1 = 1.0 madc) mmbt3904tt1 t r - 35 storage time (v cc = 3.0 vdc, i c = 10 madc) mmbt3904tt1 t s - 200 ns fall time (i b1 = i b2 = 1.0 madc) mmbt3904tt1 t f - 50 3. pulse test: pulse width 300 s, duty cycle 2.0%.
mmbt3904tt1 http://onsemi.com 3 figure 1. normalized thermal response 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 2. delay and rise time equivalent test circuit figure 3. storage and fall time equivalent test circuit +3 v 275 10 k 1n916 c s < 4 pf* +3 v 275 10 k c s < 4 pf* < 1 ns -0.5 v +10.9 v 300 ns duty cycle = 2% < 1 ns -9.1 v +10.9 v duty cycle = 2% t 1 0 10 < t 1 < 500 s * total shunt capacitance of test jig and connectors typical transient characteristics figure 4. capacitance reverse bias voltage (volts) 2.0 3.0 5.0 7.0 10 1.0 0.1 figure 5. charge data i c , collector current (ma) 5000 1.0 v cc = 40 v i c /i b = 10 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance (pf) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 q t q a c ibo c obo t j = 25 c t j = 125 c
mmbt3904tt1 http://onsemi.com 4 figure 6. turn-on time i c , collector current (ma) 70 100 200 300 500 50 figure 7. rise time i c , collector current (ma) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t , rise time (ns) figure 8. storage time i c , collector current (ma) figure 9. fall time i c , collector current (ma) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 r t , fall time (ns) f t , storage time (ns) s v cc = 40 v i c /i b = 10 v cc = 40 v i b1 = i b2 i c /i b = 20 i c /i b = 10 i c /i b = 10 t r @ v cc = 3.0 v t d @ v ob = 0 v 40 v 15 v 2.0 v i c /i b = 10 i c /i b = 20 i c /i b = 10 i c /i b = 20 t s = t s - 1 / 8 t f i b1 = i b2 typical audio small-signal characteristics noise figure variations (v ce = 5.0 vdc, t a = 25 c, bandwidth = 1.0 hz) figure 10. noise figure f, frequency (khz) 4 6 8 10 12 2 0.1 figure 11. noise figure r s , source resistance (k ohms) 0 nf, noise figure (db) 1.0 2.0 4.0 10 20 40 0.2 0.4 0 100 4 6 8 10 12 2 14 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 nf, noise figure (db) f = 1.0 khz i c = 1.0 ma i c = 0.5 ma i c = 50 a i c = 100 a source resist ance = 200 i c = 1.0 ma source resist ance = 200 i c = 0.5 ma source resist ance = 500 i c = 100 a source resistance = 1.0 k i c = 50 a
mmbt3904tt1 http://onsemi.com 5 h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25 c) figure 12. current gain i c , collector current (ma) 70 100 200 300 50 figure 13. output admittance i c , collector current (ma) h , current gain h , output admittance ( mhos) figure 14. input impedance i c , collector current (ma) figure 15. voltage feedback ratio i c , collector current (ma) 30 100 50 5 10 20 2.0 3.0 5.0 7.0 10 1.0 0.1 0.2 1.0 2.0 5.0 0.5 10 0.3 0.5 3.0 0.7 2.0 5.0 10 20 1.0 0.2 0.5 oe h , voltage feedback ratio (x 10 ) re h , input impedance (k ohms) ie 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2 1 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 fe -4 typical static characteristics figure 16. dc current gain i c , collector current (ma) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 fe v ce = 1.0 v t j = +125 c +25 c -55 c mmbt3904wt1
mmbt3904tt1 http://onsemi.com 6 figure 17. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.0 0.2 0.1 v , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 ce i c = 1.0 ma t j = 25 c 0.07 0.05 0.03 0.02 0.01 10 ma 30 ma 100 ma figure 18. on voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 1.2 0.2 figure 19. temperature coefficients i c , collector current (ma) v, voltage (volts) 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 coefficient (mv/ c) 200 -1.0 -1.5 -2.0 200 t j = 25 c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v +25 c to +125 c -55 c to +25 c +25 c to +125 c -55 c to +25 c vc for v ce(sat) vb for v be(sat)
mmbt3904tt1 http://onsemi.com 7 package dimensions sc-75/sot-416 case 463-01 issue f notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d -e- -d- b e 3 pl 0.20 (0.008) e c l a a1 style 1: pin 1. base 2. emitter 3. collector 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 mmbt3904tt1/d literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
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